Silicon carbide semiconductor device and power converter
US12057496B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2019 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Oct 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
An object of the present invention is to suppress the passage of bipolar current in a silicon carbide semiconductor device by reducing a voltage applied to a terminal well region during reflux operations. An SiC-MOSFET includes a plurality of first well regions, a second well region, a third well region in a surface layer of a drift layer, the first, second, and third well regions being of a second conductivity type. The third well region is provided on the side of the second well region opposite to the first well regions. A unit cell that includes the first well regions includes a unipolar diode. The SiC-MOSFET includes a source electrode connected to the unipolar diode and the ohmic electrode and not having ohmic connection with the second well region and the third well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.