Silicon carbide semiconductor device and method for manufacturing same
US12057498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.