Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure
US12057502B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2024 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Mar 27, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.