Semiconductor stack, semiconductor device and method for manufacturing the same
US12057524B2 · kind B2 · utility
0Cited by
8References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 2019 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Dec 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
Abstract
The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.