Patent · US Active

Light emitting diode

US12057527B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

Au Optronics Corporation · TW

Inventors

Chia-Hui Pai · Baoshan, TW
Wen-Hsien Tseng · Taichung, TW

Key dates

Filing date	Oct 19, 2021
Grant date	Aug 6, 2024
Priority date	—
Expiry date	Nov 3, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/98
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light emitting diode includes a first semiconductor layer, a second semiconductor layer, a first pad, a second pad, and a protection bump. The first semiconductor layer and the second semiconductor layer are overlapping with each other. An area of a first surface of the first semiconductor layer is larger than an area of a second surface of the second semiconductor layer. The first surface faces the second surface. The first pad is electrically connected to the first semiconductor layer. The second pad is electrically connected to the second semiconductor layer. The protection bump is located between the first pad and the second pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.