Light emitting diode structure
US12057533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Mar 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode structure including a light emitting unit having a blue LED chip to produce a first light beam, a first light conversion layer disposed on the light emitting unit to convert a part of the first light beam into a second light beam, and a second light conversion layer disposed on the first light conversion layer to convert another part of the first light beam into a third light beam is provided. A remaining part of the first light beam, the second light beam, and the third light beam are superposed to form a working light beam whose spectrum includes a first wave band ranging from 350 nm to 660 nm and a second wave band ranging from 660 nm to 1000 nm. A power of the working light beam in the second wave band is higher than that in the first wave band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.