Method for producing semiconductor lasers and semiconductor lasers

US12057676B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Thomas Schwarz · Rhede, DE
• Andreas Plößl · Regensburg, DE
• Jörg Erich Sorg · Regensburg, DE
• Frank Singer · Regenstauf, DE

Key dates

• Filing date: Nov 11, 2019
• Grant date: Aug 6, 2024
• Expiry date: Nov 28, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/02345
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.