Dual-mode high-side power field-effect transistor driver for power regulators
US12057765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2022 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Dec 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0051
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods for operating a power converter are described. An integrated circuit can be integrated in a high-side driver of a high-side fiend-effect transistor (FET) of the power converter. The integrated circuit can detect a phase node voltage of a power integrated circuit. The integrated circuit can, in response to the phase node voltage being less than a threshold voltage, operate a high-side FET of the power integrated circuit in a constant-current mode. The integrated circuit can, in response to the phase node voltage being greater than the threshold voltage, operate the high-side FET of the power integrated circuit in a constant-voltage mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.