Thin film piezoelectric acoustic wave resonator and manufacturing method therefor, and filter
US12057820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Jul 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/54
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate body and the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.