Fin field-effect transistor (FinFET) resonator
US12057821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Jun 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit may include a resonator formed from FinFET devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. Each of the drive cells may include at least two drive transistors having fins coupled to a drive terminal. Each sense cell may include two sense transistors having one fin coupled to a sense terminal and another fin coupled to ground. Adjacent drive and sense cells may be separated by an intervening region that can accommodate a number of fins. Configured in this way, the resonator can exhibit a high quality factor, low phase noise, and can operate at a frequency that is less than the characteristic resonant frequency as defined by the fin pitch of the drive and sense transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.