High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials

US12058933B2 · kind B2 · utility

Assignees

• CORNING INCORPORATED · US
• NATIONAL YANG MING CHIAO TUNG UNIVERSITY · TW

Inventors

• Mingqian He · Horseheads, US
• Robert George Manley · Vestal, US
• Karan Mehrotra · Montour Falls, US
• Hsin-Fei Meng · Hsinchu, TW
• Hsiao-Wen Zan · Hsinchu, TW

Key dates

• Filing date: Jun 7, 2023
• Grant date: Aug 6, 2024
• Expiry date: Jun 7, 2043

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.