Method for forming MTJS with lithography-variation independent critical dimension
US12058940B2 · kind B2 · utility
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Key dates
| Filing date | Jul 26, 2022 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Oct 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Some examples relate to an integrated circuit. The integrated circuit comprises a semiconductor substrate, a bottom electrode over the substrate, a circular magnetic tunneling junction (MTJ) disposed over an upper surface of bottom electrode, and a circular top electrode disposed over an upper surface of the magnetic tunneling junction. The circular top electrode is concentric to the circular magnetic tunneling junction, and a diameter of the circular magnetic tunneling junction is smaller than 60 nm or smaller than 30 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.