Low power hybrid reverse bandgap reference and digital temperature sensor
US12061493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2020 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Dec 12, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.