Memory system and read method
US12062400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2022 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Feb 16, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system includes a memory including nonvolatile memory cells, and a controller configured to set read voltages for reading data stored in the nonvolatile memory cells. The controller stores first shift patterns relating to a plurality of read voltages, first index information associating to a first shift pattern with each of a plurality of memory cell groups, second shift patterns relating to differences between read voltages and read voltages set according to a first shift pattern, and second index information associating a second shift pattern with each memory cell group. The controller generates read voltages of a target memory cell group based on the first shift pattern voltages and the second shift pattern voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.