Semiconductor-on-insulator (SOI) substrate and method for forming
US12062539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2023 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Jun 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.