Epitaxies of a chemical compound semiconductor
US12062541B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jul 26, 2022 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Jul 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.