Etching method for oxide semiconductor film
US12062548B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Jan 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.