Method of manufacturing semiconductor devices
US12062582B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2020 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Oct 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.