Crystallization process of oxide semiconductor, and method of manufacturing thin film transistor, a thin film transistor, a display panel, and an electronic device
US12062668B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 24, 2021 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a crystallization process of an oxide semiconductor, a method of manufacturing a thin film transistor including the same, a thin film transistor, a display panel, and an electronic device. The crystallization process of an oxide semiconductor includes forming an amorphous oxide semiconductor layer on a substrate, forming a crystallization auxiliary layer including a light absorbing inorganic material on the amorphous oxide semiconductor layer, and annealing the crystallization auxiliary layer to crystallize the amorphous oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.