Patent · US Active

Manufacturing method of display substrate, display substrate and display device

US12062711B2 · kind B2 · utility

0Cited by
9References
19Claims
0Family size

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Key dates

Filing dateSep 30, 2021
Grant dateAug 13, 2024
Priority date
Expiry dateJan 27, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6729
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.