Patent · US Active

Solar cells

US12062728B1 · kind B1 · utility

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Key dates

Filing dateNov 7, 2023
Grant dateAug 13, 2024
Priority date
Expiry dateNov 7, 2043

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.