Patent · US Active

Semiconductor device

US12063031B2 · kind B2 · utility

0Cited by
1References
11Claims
0Family size

Assignees

Inventor

Key dates

Filing dateSep 8, 2021
Grant dateAug 13, 2024
Priority date
Expiry dateOct 13, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K2217/0081
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor device includes a first circuit configured to generate a first voltage, a second circuit configured to transfer the generated first voltage to a first terminal, and a third circuit configured to generate a first signal that demonstrates a first level when a voltage at the first terminal is higher than or equal to a threshold voltage, and a second level when the voltage of the first terminal is lower than the threshold voltage, wherein the second circuit is configured to interrupt transfer of the first voltage, based on the first signal at the second level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.