Method for manufacturing microelectrode film
US12063749B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | May 27, 2020 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/308
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present application provides a method for manufacturing a microelectrode film. The method includes: forming at least one recess on the carrier substrate by isotropic etching; forming a microelectrode seed pattern in the recess; growing a microelectrode in the recess by using the microelectrode seed pattern; making a first substrate to be in contact with a side of the carrier substrate having the recess thereon; separating the microelectrode from the carrier substrate to transfer the microelectrode onto the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.