Patent · US Active

Memory arrays and methods used in forming a memory array comprising strings of memory cells

US12063783B2 · kind B2 · utility

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2Claims

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Inventors

Xiaosong Zhang · Boise, US
Yi Hu · Boise, US
Tom J. John · Boise, US
Wei Yeeng Ng · Boise, US
Chandra S. Tiwari · Boise, US

Key dates

Filing date	Mar 3, 2023
Grant date	Aug 13, 2024
Priority date	—
Expiry date	Mar 3, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.