Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

US12064846B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

• Bryan E. Barton · Belle Bridge, US
• Annette M. Crevasse · Orlando, US
• Teresa Brugarolas Brufau · Philadelphia, US
• Vere O. Archibald · North Wales, US
• Michael E. Mills · Midland, US

Key dates

• Filing date: Jan 21, 2021
• Grant date: Aug 20, 2024
• Expiry date: Sep 28, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30625
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

The present invention provides CMP polishing pads or layers having a Shore DO (15 second) hardness of from 40 to 80 made from a two-component reaction mixture of (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 15 to 36 wt. %, based on the total weight of the liquid polyol component, of one or more small chain difunctional polyols having from 2 to 6 carbon atoms, c) from 0 to 25 wt. %, based on the total weight of the liquid polyol component, of a liquid aromatic diamine which is a liquid at standard pressure and at 40° C., and d) an amount of water or CO2-amine adduct sufficient to reduce the density of a CMP polishing pad made from the two-component reaction mixture to from 0.2 to 0.50 g/mL, wherein the reaction mixture comprises 60 to 75 wt. % of hard segment materials, based on the total weight of the reaction mixture.