Monocrystal growth method and monocrystal growth device
US12065757B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 5, 2022 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A monocrystal growth method and device. The method includes loading silicon material into a crucible for melting to form molten silicon liquid; lowering a heat shield to a preset position, a first preset distance is formed between a lower edge of the heat shield and a liquid level of the molten silicon liquid; in a first stage, using a counterweight to hang a seed shaft to gradually descend in a first direction, using a camera apparatus to acquire a pixel image of the seed shaft and the lower edge of the heat shield for comparison to reference; then a second stage is entered, in which the image processing apparatus records a current position of the seed shaft, the seed shaft is continuously lowered until the seed shaft extends into the molten silicon liquid for welding; seeding; shouldering; body growth; and tailing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.