Semiconductor device
US12068280B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Oct 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device including a first electrode including a first plate portion, the first plate portion including a first surface and a second surface facing the first surface, a plurality of semiconductor chips provided above the second surface, and a second electrode including a second plate portion provided above the semiconductor chips, the second plate portion including a third surface facing the second surface and a fourth surface facing the third surface, the second plate portion including a plurality of protrusion portions provided between the semiconductor chips and the third surface, the protrusion portions being connected to the third surface, each of the protrusion portions including a top surface including the same shape as a shape of each of the semiconductor chips in a plane parallel to the second surface, the second plate portion including a second outer diameter larger than a first diameter of a smallest circle circumscribing the protrusion portions provided on an outermost side among the protrusion portions in a plane parallel to the third surface, and a third plate portion including a fifth surface connected to the fourth surface and a sixth…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.