Semiconductor device and method for manufacturing same
US12068411B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 26, 2018 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Mar 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.