Power semiconductor device
US12068412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Mar 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A power semiconductor device according to an aspect of the present disclosure includes a semiconductor layer of silicon carbide (SiC), a plurality of well regions that is disposed in the semiconductor layer, spaced from each other and has a second conductivity type, a plurality of source regions that are disposed in the semiconductor layer on the plurality of well regions respectively, spaced from each other, a drift region that has the first conductivity type and is disposed in the semiconductor layer, the drift region extending from a lower side of the plurality of well regions to a surface of the semiconductor layer through between the plurality of well regions, a plurality of trenches, a gate insulating layer, and a gate electrode layer that is disposed on the gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.