Microscale plasma limiter integrated into thick film interconnect
US12068516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2022 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Dec 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P3/003
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) transmission line is described. The RF transmission line includes a first ground line, a second ground line, and a signal line disposed on a substrate and forming a coplanar waveguide. A plasma limiter feature is integrated into an internal surface of one or more of the first ground line, the second ground line, and the signal line. The plasma limiter decreases a gap distance between the signal line and the associated ground line. The gap distance is selected, together with a gas pressure, to control a voltage at which the gas within the gap breaks down, targeted at a breakdown power of 1 W across a wide bandwidth. The plasma limiter thus limits a power transmitted by way of the RF transmission line for protecting a sensitive integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.