Laser device and method of manufacturing the same
US12068575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.