Fabrication method of film bulk acoustic resonator (FBAR) filter device
US12068733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2023 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Sep 25, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D30/70
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a film bulk acoustic resonator (FBAR) filter device is provided. The method includes: forming a first electrode of each one of a first resonator and a second resonator on a first surface of a piezoelectric layer, forming a first passivation layer of each one of the first resonator and the second resonator on a corresponding one of the first electrodes, forming a second electrode of each one of the first resonator and the second resonator on a second surface of the piezoelectric layer, conducting a radio frequency (RF) performance test on the FBAR filter device, adjusting a thickness of the second electrode of the first resonator based on a result of the RF performance test, and forming a second passivation layer of each one of the first resonator and the second resonator on a corresponding one of the second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.