Patent · US Active

Method for forming an aluminum nitride layer

US12068734B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

RF360 Singapore Pte. Ltd. · SG

Inventors

Maximilian SCHIEK · Puchheim, DE
Christian Ceranski · Munich, DE
Günter Scheinbacher · Baldham, DE

Key dates

Filing date	Feb 19, 2019
Grant date	Aug 20, 2024
Priority date	—
Expiry date	Sep 21, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10N30/076
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grown above the exposed portion (101) of the substrate (100) exhibits piezoelectric properties. An aluminum nitride layer portion (310) grown above the patterned metal nitride layer (110) exhibits no piezoelectric properties (310). Both aluminum nitride layer portions (320, 310) are grown simultaneously.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.