Substrate for epitaxial growth and method for producing same
US12070923B2 · kind B2 · utility
0Cited by
0References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 10, 2022 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E40/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.