Organometallic radiation patternable coatings with low defectivity and corresponding methods
US12072626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Feb 24, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.