Etching compositions
US12074020B2 · kind B2 · utility
0Cited by
5References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2022 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Dec 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.