Methods of manufacturing semiconductor devices
US12074023B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 25, 2023 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02499
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.