Semiconductor device and manufacturing method thereof
US12074028B2 · kind B2 · utility
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18References
20Claims
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Key dates
| Filing date | Nov 7, 2022 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Nov 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes method to form a semiconductor device with a diffusion barrier layer. The method includes forming a gate dielectric layer on a fin structure, forming a work function stack on the gate dielectric layer, reducing a carbon concentration in the work function stack, forming a barrier layer on the work function stack, and forming a metal layer over the barrier layer. The barrier layer blocks a diffusion of impurities into the work function stack, the gate dielectric layer, and the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.