Patent · US Active

Semiconductor device structure with magnetic element

US12074193B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 2023
Grant dateAug 27, 2024
Priority date
Expiry dateMar 30, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/05
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.