Semiconductor device with a field plate extending from drain

US12074199B2 · kind B2 · utility

Assignee

• INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. · CN

Inventors

• King-Yuen Wong · Issaquah, US
• Ronghui Hao · Zhuhai, CN

Key dates

• Filing date: Oct 12, 2022
• Grant date: Aug 27, 2024
• Expiry date: Oct 12, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

Some embodiments of the present disclosure provide a semiconductor device including a channel layer, a barrier layer, a p-type doped III-V layer, a gate, a drain, and a doped semiconductor layer. The barrier layer is disposed on the channel layer. The p-type doped III-V layer is disposed on the barrier layer. The gate is disposed on the p-type doped III-V layer. The drain is disposed on the barrier layer. The doped semiconductor layer is disposed on the barrier layer and is covered by the drain. The drain has a first portion located between the p-type doped III-V layer and an entirety of the doped semiconductor layer.