Anode sensing circuit for single photon avalanche diodes
US12074242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2022 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Nov 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is an array of pixels. Each pixel includes a single photon avalanche diode (SPAD) and a transistor circuit. The transistor circuit includes a clamp transistor configured to clamp an anode voltage of the SPAD to be no more than a threshold clamped anode voltage, and a quenching element in series with the clamp transistor and configured to quench the anode voltage of the SPAD when the SPAD is struck by an incoming photon. Readout circuitry is coupled to receive the clamped anode voltage from the transistor circuit and to generate a pixel output therefrom, the threshold clamped anode voltage being below a maximum voltage rating of transistors forming the readout circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.