Light emitting diode chip and method for manufacturing the same, display device
US12074258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.