HgCdTe metasurface-based terahertz source and detector
US12075701B2 · kind B2 · utility
0Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Jun 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/703
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.