MEMS device having decreased contact resistance
US12077431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2020 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Apr 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0084
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.