Method of growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same
US12077853B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2020 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Feb 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.