Device having one or more first level ion traps
US12080541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2023 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jun 19, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for trapping ions includes: a first substrate having an upper multi-layer electrode structure implemented at a top side of the first substrate; a second substrate disposed over the first substrate and having a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate. The one or more first level ion traps includes the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate. A method of controlling trapped ions in a device is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.