Tungsten alloys in semiconductor devices
US12080648B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.