Semiconductor die and method of manufacturing the same
US12080789B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 22, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor die is described. The semiconductor die includes a semiconductor body having an active region, a metallization formed on the semiconductor body, and a passivation formed on the metallization. The metallization includes at least one of a titanium layer, a titanium nitride layer, and a tungsten layer. The passivation includes a silicon oxide layer. Corresponding methods of manufacturing and using the semiconductor die are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.