Silicon carbide-based lateral PN junction extreme ultraviolet detector based on selective-area ion implantation, and preparation method thereof
US12080821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2024 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Feb 27, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention discloses a novel silicon carbide-based lateral PN junction extreme ultraviolet detector with enhanced detection performance based on selective-area ion implantation, including an N-type ohmic contact lower electrode, an N-type substrate and a lightly-doped epitaxial layer which are connected sequentially from bottom to top, where the lightly-doped epitaxial layer is an N-type lightly-doped epitaxial layer or a P-type lightly-doped epitaxial layer; in a case that the lightly-doped epitaxial layer is an N-type or P-type lightly-doped epitaxial layer, a P-type or N-type well region is formed on the surface of the N-type or P-type lightly-doped epitaxial layer through the selective-area ion implantation, a P-type or N-type ohmic contact upper electrode is arranged on the P-type or N-type well region, and the P-type or N-type ohmic contact upper electrode is provided with a metal conductive electrode along its periphery.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.