Light-emitting device with semiconductor stack and reflective layer on semiconductor stack
US12080831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2023 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jun 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.